Column-by-Column Imaging of Dislocation Slip Processes in CdTe
نویسندگان
چکیده
The migration of dislocations affects many material properties including deformation, plasticity and electronic properties. In order to understand the mechanism of the motion of dislocations, both experimental and theoretical studies have been performed [1]. It is known that full dislocations such as edge or screw dislocations can dissociate into Shockley partial dislocations, which have higher mobility than full dislocations. However, direct observation of the Shockley partial dislocation movements at the atomic level has not been achieved before.
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